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DISCRETE SEMICONDUCTORS
DATA SHEET
LBE2003S; LBE2009S; LCE2009S NPN microwave power transistors
Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Mar 03
Philips Semiconductors
Product specification
NPN microwave power transistors
FEATURES * Diffused emitter ballasting resistors * Self-aligned process entirely ion implanted and gold metallization * Optimum temperature profile * Excellent performance and reliability. APPLICATIONS * Common emitter class-A linear power amplifiers up to 4 GHz. PIN 1 2 3 4 DESCRIPTION
LBE2003S; LBE2009S; LCE2009S
The LBE2003S and LBE2009S are NPN silicon planar epitaxial microwave power transistors in a SOT441A metal ceramic studless package.The LCE2009S is a maintenance type in a SOT442A metal ceramic capstan package. PINNING DESCRIPTION collector emitter base emitter
handbook, halfpage
4
handbook, halfpage
4
c
3 1 3
c b e
2 Top view Marking code: LCE2009S = 408.
MAM330
b e
2
1
Top view
MAM329
Marking code: LBE2003S = 407; LBE2009S = 409.
Fig.1 Simplified outline and symbol (SOT441A).
Fig.2 Simplified outline and symbol (SOT442A).
QUICK REFERENCE DATA Microwave performance up to Tmb = 25 C in a common emitter class-A amplifier. TYPE NUMBER LBE2003S LBE2009S LCE2009S MODE OF OPERATION Class-A (CW) linear Class-A (CW) linear f (GHz) 2 2 VCE (V) 18 18 IC (mA) 30 110 PL1 (mW) 200 700 Gpo (dB) 10 9 Zi () 6.2 + j30 7.5 + j15 ZL () 17.5 + j7 17.5 + j39
WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Mar 03
2
Philips Semiconductors
Product specification
NPN microwave power transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCER PARAMETER collector-base voltage collector-emitter voltage LBE2003S LBE2009S; LCE2009S VCEO VEBO IC collector-emitter voltage emitter-base voltage collector current (DC) LBE2003S LBE2009S; LCE2009S Ptot total power dissipation LBE2003S LBE2009S; LCE2009S Tstg Tj Tsld storage temperature operating junction temperature soldering temperature Tmb 75 C RBE = 220 RBE = 100 open base open collector CONDITIONS open emitter
LBE2003S; LBE2009S; LCE2009S
MIN.
MAX. 40 V V V V V
UNIT
- - - - - - - - -65 -
35 35 16 3 90 250 1.4 3.5 +150 200 235
mA mA W W C C C
at 0.3 mm from case; t = 10 s -
102 handbook, halfpage
MGD996
handbook, halfpage
2
MGD989
IC (mA)
Ptot (W) 1.5
(1)
(2)
(3)
10
1
0.5
1 10
15
20
30
40
60
100 VCE (V)
0 -50
0
50
100
150 200 Tmb (oC)
Tmb 75 C. (1) Region of permissible DC operation. (2) Permissible extension provided RBE 220 . (3) Second breakdown limit (independent of temperature).
Fig.4 Fig.3 DC SOAR; LBE2003S.
Power dissipation derating as a function of mounting-base temperature; LBE2003S.
LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Mar 03
3
Philips Semiconductors
Product specification
NPN microwave power transistors
LBE2003S; LBE2009S; LCE2009S
103 handbook, halfpage IC (mA) 102
(3)
MGD990
handbook, halfpage
4
MGD991
P tot (W) 3
2
(1) (2)
10 1
1 10
20
40
VCE (V)
102
0 -50
0
50
100
200 150 Tmb (oC)
Tmb 75 C. (1) Region of permissible DC operation. (2) Permissible extension provided RBE 100 . (3) Second breakdown limit (independant of temperature).
Fig.6
Fig.5
DC SOAR; LBE2009S, LCE2009S
Power dissipation derating as a function of mounting-base temperature; LBE2009S, LCE2009S.
THERMAL CHARACTERISTICS SYMBOL Rth j-mb LBE2003S LBE2009S; LCE2009S Rth mb-h Note 1. See "Mounting recommendations in the General part of handbook SC15". thermal resistance from mounting-base to heatsink Tj = 75 C; note 1 PARAMETER thermal resistance from junction to mounting-base CONDITIONS Tj = 75 C; note 1 65 36 1.5 K/W K/W K/W MAX. UNIT
LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Mar 03
4
Philips Semiconductors
Product specification
NPN microwave power transistors
CHARACTERISTICS Tmb = 25 C unless otherwise specified. SYMBOL ICBO ICBO PARAMETER collector cut-off current collector cut-off current LBE2003S LBE2009S; LCE2009S ICER collector cut-off current LBE2003S LBE2009S; LCE2009S IEBO emitter cut-off current LBE2003S LBE2009S; LCE2009S hFE Ccb DC current gain collector-base capacitance LBE2003S LBE2009S; LCE2009S Cce collector-emitter capacitance LBE2003S LBE2009S; LCE2009S Ceb emitter-base capacitance LBE2003S LBE2009S; LCE2009S VCB = 10 V; VEB = 1 V; IE = IC = 0; f = 1 MHz - - VCE = 18 V; VEB = 1.5 V; IE = IC = 0; f = 1 MHz - - VCE = 5 V; IC = 30 mA VCE = 5 V; IC = 110 mA VCB = 18 V; VEB = 1.5 V; IE = IC = 0; f = 1 MHz - - VCB = 35 V; RBE = 220 VCB = 35 V; RBE = 100 VEB = 1.5 V; IC = 0 - - 15 15 - - CONDITIONS VCB = 20 V; IE = 0 VCB = 40 V; IE = 0 - - - MIN.
LBE2003S; LBE2009S; LCE2009S
TYP. - - - - - - - - -
MAX. 0.1 150 250 500 1000 0.05 0.2 150 150
UNIT A A A A A A A
0.3 0.6
- -
pF pF
0.45 0.6
- -
pF pF
1.7 3.3
- -
pF pF
LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Mar 03
5
Philips Semiconductors
Product specification
NPN microwave power transistors
Table 1
LBE2003S; LBE2009S; LCE2009S
Scattering parameters LBE2003S: VCE = 18 V; IC = 30 mA (VCE and IC regulated); Tmb = 25 C; Zo = 50 ; typical values. (The figures given between brackets are values in dB). s11 MAGNITUDE (ratio) 0.56 0.55 0.55 0.55 0.55 0.55 0.55 0.55 0.56 0.55 0.55 0.55 0.56 0.57 0.57 0.58 0.60 0.62 0.64 0.66 0.68 0.71 0.73 0.75 0.76 0.77 0.78 0.80 0.81 0.81 0.81 0.80 0.81 0.81 0.81 0.80 ANGLE (deg) -143 -154 -164 -171 -178 176 170 165 159 158 149 146 142 137 132 128 121 114 108 102 96 92 89 86 82 79 75 73 69 68 65 60 56 51 48 44 s21 MAGNITUDE (ratio) 0.037 (-28.6) 0.040 (-28.0) 0.040 (-27.9) 0.041 (-27.7) 0.043 (-27.4) 0.045 (-26.9) 0.048 (-26.4) 0.051 (-25.9) 0.056 (-25.1) 0.060 (-24.5) 0.062 (-24.2) 0.065 (-23.8) 0.068 (-23.3) 0.070 (-23.1) 0.072 (-22.9) 0.074 (-22.7) 0.081 (-21.8) 0.091 (-20.8) 0.099 (-20.1) 0.105 (-19.6) 0.108 (-19.4) 0.124 (-18.7) 0.125 (-18.0) 0.137 (-17.3) 0.142 (-17.0) 0.149 (-16.6) 0.155 (-16.2) 0.167 (-15.5) 0.177 (-15.0) 0.187 (-14.6) 0.194 (-14.3) 0.203 (-13.8) 0.219 (-13.2) 0.229 (-12.8) 0.243 (-12.3) 0.245 (-12.2) ANGLE (deg) 41 39 40 40 41 40 40 41 41 41 40 42 42 41 40 40 39 37 36 33 31 29 27 25 23 20 17 15 12 10 6 4 -1 -3 -8 -12 s12 MAGNITUDE (ratio) 9.50 (19.6) 8.28 (18.4) 7.13 (17.1) 6.35 (16.1) 5.69 (15.1 5.14 (14.2 4.72 (13.5 4.37 (12.8 4.05 (12.2 3.76 (11.5 3.52 (10.9 3.33 (10.5 3.15 (10.0 2.96 (9.4) 2.80 (8.9) 2.66 (8.5) 2.43 (7.7) 2.24 (7.0) 2.08 (6.4) 1.90 (5.6) 1.79 (5.1) 1.63 (4.3) 1.58 (4.0) 1.46 (3.3) 1.40 (2.9) 1.31 (2.3) 1.25 (1.9) 1.20 (1.6) 1.14 (1.1) 1.10 (0.8) 1.04 (0.4) 1.03 (0.3) 0.98 (-0.2) 0.97 (-0.3) 0.92 (-0.7) 0.90 (-0.9) ANGLE (deg) 101 93 88 82 77 72 68 64 60 57 53 50 46 42 39 36 28 23 16 10 4 -2 -7 -13 -18 -24 -28 -34 -38 -43 -47 -53 -57 -62 -68 -72 s22 MAGNITUDE (ratio) 0.56 0.51 0.50 0.49 0.47 0.46 0.46 0.45 0.44 0.45 0.43 0.43 0.43 0.43 0.43 0.42 0.41 0.40 0.39 0.38 0.39 0.37 0.40 0.39 0.38 0.38 0.38 0.39 0.39 0.42 0.44 0.47 0.48 0.49 0.51 0.55 ANGLE (deg) -34 -35 -36 -37 -38 -39 -39 -41 -44 -46 -48 -50 -53 -54 -56 -57 -61 -67 -75 -82 -87 -94 -101 -112 -120 -128 -133 -142 -151 -159 -165 -169 -175 -178 -171 -165
f (MHz) 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2200 2400 2600 2800 3000 3200 3400 3600 3800 4000 4200 4400 4600 4800 5000 5200 5400 5600 5800 6000
1997 Mar 03
6
Philips Semiconductors
Product specification
NPN microwave power transistors
Table 2
LBE2003S; LBE2009S; LCE2009S
Scattering parameters LBE2009S; LCE2009S: VCE = 18 V; IC = 110 mA (VCE and IC regulated); Tmb = 25 C; Zo = 50 ; typical values. (The figures given between brackets are values in dB). s11 MAGNITUDE (ratio) 0.70 0.70 0.70 0.70 0.71 0.71 0.71 0.71 0.71 0.72 0.72 0.72 0.72 0.73 0.73 0.74 0.75 0.77 0.79 0.80 0.81 0.83 0.85 0.86 0.87 0.88 0.88 0.89 0.90 0.90 0.90 ANGLE (deg) 177 171 168 163 159 155 151 148 144 143 136 133 130 127 123 120 114 108 103 97 92 88 85 82 79 75 71 69 66 64 61 s21 MAGNITUDE (ratio) 0.029 (-30.7) 0.033 (-29.6) 0.036 (-29.0) 0.039 (-28.4) 0.041 (-27.8) 0.045 (-27.0) 0.049 (-26.2) 0.054 (-25.4) 0.060 (-24.5) 0.066 (-23.6) 0.070 (-23.1) 0.075 (-22.5) 0.080 (-21.9) 0.084 (-21.5) 0.087 (-21.2) 0.090 (-20.9) 0.100 (-20.0) 0.112 (-19.0) 0.123 (-18.2) 0.129 (-17.8) 0.134 (-17.5) 0.143 (-16.9) 0.152 (-16.4) 0.163 (-15.8) 0.168 (-15.5) 0.175 (-15.2) 0.180 (-14.9) 0.193 (-14.3) 0.200 (-14.0) 0.211 (-13.5) 0.214 (-13.4) ANGLE (deg) 50 51 53 54 54 55 54 54 53 54 52 53 51 49 48 46 43 40 37 33 30 26 24 20 17 14 11 8 5 2 -2 s12 MAGNITUDE (ratio) 7.55 (17.6) 6.43 (16.2) 5.46 (14.6) 4.80 (13.6) 4.27 (12.6) 3.84 (11.7) 3.53 (11.0) 3.27 (10.3) 3.01 (9.6) 2.80 (9.0) 2.61 (8.3) 2.47 (7.9) 2.33 (7.3) 2.18 (6.8) 2.05 (6.3) 1.97 (5.9) 1.78 (5.0) 1.63 (4.3) 1.51 (3.6) 1.36 (2.7) 1.28 (2.1) 1.15 (1.2) 1.10 (0.9) 1.00 (0) 0.96 (-0.4) 0.88 (-1.1) 0.83 (-1.6) 0.79 (-2.1) 0.74 (-2.6) 0.71 (-3.0) 0.66 (-3.6) ANGLE (deg) 83 77 73 68 64 60 56 52 48 45 41 38 34 30 26 23 15 10 2 -4 -11 -17 -21 -28 -32 -39 -42 -48 -51 -56 -59 s22 MAGNITUDE (ratio) 0.25 0.22 0.23 0.22 0.22 0.21 0.21 0.21 0.20 0.20 0.21 0.21 0.22 0.22 0.22 0.22 0.22 0.21 0.24 0.25 0.27 0.28 0.30 0.34 0.37 0.41 0.42 0.45 0.48 0.52 0.55 ANGLE (deg) -48 -50 -52 -54 -56 -59 -62 -65 -74 -79 -80 -83 -87 -90 -94 -97 -109 -122 -133 -143 -151 -163 -173 178 173 168 162 155 149 145 144
f (MHz) 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2200 2400 2600 2800 3000 3200 3400 3600 3800 4000 4200 4400 4600 4800 5000
LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Mar 03
7
Philips Semiconductors
Product specification
NPN microwave power transistors
LBE2003S; LBE2009S; LCE2009S
APPLICATION INFORMATION Microwave performance for LBE2003S up to Tmb = 25 C in a common emitter class-A test circuit; note 1. MODE OF OPERATION Class-A (CW) Notes 1. Circuit consists of prematching circuit boards in combination with complementary input and output slug tuners. 2. IC and VCE regulated. 3. Load power for 1 dB compressed power gain. 4. Low level power gain associated with PL1. f (GHz) 2 VCE (V) (2) 18 IC (mA) (2) 30 PL1 (mW) (3) 200 (23) typ. 250 (24) Gpo (dB) (4) 10 typ. 11 Zi () 6.2 + j30 ZL () 17.5 + j7
handbook, full pagewidth
3
2.5
66.5 2 12.5 1.2 6 12.5 21 3 22
7
10.5
10.5 1 input 2 0.5 C
6
5 2 5 3.5 C 14.5 2 output
MCD635
Dimensions in mm. Striplines on a double copper-clad printed-circuit board with PTFE fibreglass dielectric (r = 2.54); thickness: 0.8 mm.
Fig.7 Prematching test circuit board for 2 GHz.
LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Mar 03
8
Philips Semiconductors
Product specification
NPN microwave power transistors
LBE2003S; LBE2009S; LCE2009S
handbook, halfpage
300
MGD992
handbook, halfpage
10
MGD993
PL (mW) 200
(1)
PL1
S12 (dB)
typ
typ 5
100
0 0 10 20 Pi (mW) 30
0 0 20 40 60 IC (mA) 80
f = 2 GHz; Tmb = 25 C. VCE = 18 V; IC = 30 mA. (1) Gpo = 11 dB.
Class-A operation. f = 2 GHz; Tmb = 25 C; VCE = 18 V.
Fig.8 Load power as a function of input power.
Fig.9
s12 as a function of collector current.
LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Mar 03
9
Philips Semiconductors
Product specification
NPN microwave power transistors
LBE2003S; LBE2009S; LCE2009S
Microwave performance for LBE2009S; LCE2009S up to Tmb = 75 C in a common emitter class-A test circuit; note 1. MODE OF OPERATION Class-A (CW) Notes 1. Circuit consists of prematching circuit boards in combination with complementary input and output slug tuners. 2. IC and VCE regulated. 3. Load power for 1 dB compressed power gain. 4. Low level power gain associated with PL1. f (GHz) 2 VCE (V) (2) 18 IC (mA) (2) 110 PL1 (mW) (3) 700 (28.5) typ. 900 (29.5) Gpo (dB) (4) 9 typ. 9.8 Zi () 7.5 + j14.5 ZL () 17.5 + j38.5
1.2
handbook, full pagewidth
26.4
12.4
13
25
2
input VSWR < 3.5 Zo = 50
2
0.8 6.8
2
5.2
2
output VSWR < 3 Zo = 50
MGD999
Dimensions in mm. Striplines on a double copper-clad printed-circuit board with PTFE fibreglass dielectric (r = 2.54); thickness: 0.8 mm.
Fig.10 Prematching test circuit board for 2 GHz.
LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Mar 03
10
Philips Semiconductors
Product specification
NPN microwave power transistors
LBE2003S; LBE2009S; LCE2009S
handbook, halfpage
(1)
1
MGD994
handbook, halfpage
8
MGD995
PL (W)
PL1
S12 (dB)
typ
0.5
4
0 0 50 100 Pi (mW) 150
0 0 50 100 IC (mA) 150
f = 2 GHz; Tmb = 25 C. VCE = 18 V; IC = 110 mA. (1) Gpo = 9.8 dB.
Class-A operation. f = 2 GHz; Tmb = 25 C; VCE = 18 V.
Fig.11 Load power as a function of input power.
Fig.12 s12 as a function of collector current.
LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Mar 03
11
Philips Semiconductors
Product specification
NPN microwave power transistors
PACKAGE OUTLINES Studless ceramic package; 4 leads
LBE2003S; LBE2009S; LCE2009S
SOT441A
D A
AI2O3
Q D1 BeO seating plane c
b
4 L
3 b1 1
L
2
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A max. 2.4 b 3.2 b1 0.75 c 0.125 D 3.38 3.08 D1 5.28 5.12 L min. 6 Q 1.3 1.0
90
Note 1. This device corporates naked beryllium oxide, the dust of witch is toxic. OUTLINE VERSION SOT441A REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28
1997 Mar 03
12
Philips Semiconductors
Product specification
NPN microwave power transistors
LBE2003S; LBE2009S; LCE2009S
Studded ceramic package; 4 leads
SOT442A
D2 D
A
Q N1
D1 seating plane
c M W
N2 N X N3 M1
detail X b
4 L
3 b1 1
L
2
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A max. 4.0 b 3.2 b1 0.75 c 0.125 D 3.38 3.08 D1 5.25 5.10 D2 5.28 5.12 L min. 6 M 3.27 3.01 M1 1.6 1.4 N max. 12.5 N1 max. 1.6 N2 8.5 7.5 N3 min 2.9 Q 2.80 2.50 W 8-32 UNC
90
Note 1. This device corporates naked beryllium oxide, the dust of witch is toxic. OUTLINE VERSION SOT442A REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28
1997 Mar 03
13
Philips Semiconductors
Product specification
NPN microwave power transistors
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
LBE2003S; LBE2009S; LCE2009S
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Mar 03
14
Philips Semiconductors
Product specification
NPN microwave power transistors
NOTES
LBE2003S; LBE2009S; LCE2009S
1997 Mar 03
15
Philips Semiconductors - a worldwide company
Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 1949 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580/xxx France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd. Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Rua do Rocio 220, 5th floor, Suite 51, 04552-903 Sao Paulo, SAO PAULO - SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2870, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA53
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
127147/00/02/pp16
Date of release: 1997 Mar 03
Document order number:
9397 750 01864

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